SUM90N10-8M2P-E3

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SUM90N10-8M2P-E3 datasheet

• Маркировка
  SUM90N10-8M2P-E3
• Производитель
  Vishay Intertechnology
• Описание
  Vishay Intertechnology SUM90N10-8M2P-E3 Configuration: Single Continuous Drain Current: 90 A Current - Continuous Drain (id) @ 25?° C: 90A Drain Source Voltage Vds: 100V Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 150nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1716616 Input Capacitance (ciss) @ Vds: 6290pF @ 50V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount On Resistance Rds(on): 6.7mohm Operating Temperature Range: -55?‚?°C To +175?‚?°C Package / Case: TO-263-3, D??Pak (2 leads + Tab), TO-263AB Power - Max: 3.75W Power Dissipation: 3.75 W Rds On (max) @ Id, Vgs: 8.2 mOhm @ 20A, 10V Rds(on) Test Voltage Vgs: 10V Resistance Drain-source Rds (on): 0.0082 Ohms Rohs Compliant: Yes Series: TrenchFET?® Transistor: RoHS Compliant Transistor Case Style: TO-263 Transistor Polarity: N Channel Vgs(th) (max) @ Id: 4.5V @ 250?µA Voltage Vgs Max: 20V Other Names: SUM90N10-8M2P-E3TR
• Количество страниц
  6 шт.
• Форматы файла
  HTML, PDF

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